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Al-W amorphous thin films


Radić, Nikola; Car, Tihomir; Tonejc, Antun; Ivkov, Jovica; Stubičar, Mirko; Metikoš-Huković, Mirjana
Al-W amorphous thin films // International Workshop on Physics and Technology of Thin Films, Program and Abstracts / Moshfegh, Ali Reza (ur.).
Teheran: Department of Physics, Sharif University of Technology, 2003. str. 34-35 (predavanje, međunarodna recenzija, sažetak, znanstveni)


CROSBI ID: 127179 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Al-W amorphous thin films

Autori
Radić, Nikola ; Car, Tihomir ; Tonejc, Antun ; Ivkov, Jovica ; Stubičar, Mirko ; Metikoš-Huković, Mirjana

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
International Workshop on Physics and Technology of Thin Films, Program and Abstracts / Moshfegh, Ali Reza - Teheran : Department of Physics, Sharif University of Technology, 2003, 34-35

Skup
International Workshop on Physics and Technology of Thin Films, IWTF2003

Mjesto i datum
Teheran, Iran, 22.02.2003. - 06.03.2003

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
aluminum; tungsten; amorphous; thin film

Sažetak
Aluminum-tungsten amorphous alloys seem to be promising materials according to the specific properties of their respective components. However, their thermal stability is essential for any application at sustained elevated temperatures. We have investigated Al-W amorphous alloys thermal stability and variation of mechanical, electrical and corrosion properties up to the crystallization temperature. The Al-W thin films were prepared by simultaneous d.c. sputtering of both pure Al and pure W in a two source sputtering apparatus. The films with composition in the range from Al82W18 to Al62W38 were completely amorphous. Thermal stability of amorphous films was investigated by the continuous in situ electric resistance measurements in a vacuum better than 10-5 mbar. The initial and final structure of the film submitted to the up/down temperature cycle were determined by the XRD method. The Al-W amorphous alloys exhibit high crystallization temperatures (520oC-620oC) within a whole compositional range of amorphicity. A dominant crystallization product is always Al4W. The Al-W films are also rather stable against prolonged annealing at temperatures slightly below crystallization temperature. However, the amorphous films exhibit a pronounced structural relaxation upon first heating at temperatures between about 100oC to 500oC. The relaxation was more pronounced in aluminum-rich alloys, which might be due to specific electronic structure of aluminum. Hall effect measurements support the importance of the sp-d electronic bands hybridization in the examined films. Attempt to minimize relaxation by the increase of substrate temperature during deposition yielded a two-phase films, and the SEM examination revealed a dense population of whiskers at the surface of samples. Microhardness of the as-deposited Al-W amorphous films is about 11 GPa and only slightly depends upon composition. It only marginally increases upon annealing in vacuum up to the crystallization temperatures, while rise of about 20-30% is observed after crystallization. Corrosion resistance of amorphous Al-W alloys was investigated in chloride acid solution and artificial saliva solution. The Al-W thin films are inherently passive materials, and the increase of tungsten content in the alloy increases the resistance against pitting corrosion and lowers the overall rate of corrosion. Thermally crystallized Al-W films exhibit somewhat lower corrosion resistance in comparison with amorphous films. In conclusion, Al-W amorphous thin films are rather thermally stable and exhibit physical properties which make them suitable for certain applications.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA



Citiraj ovu publikaciju:

Radić, Nikola; Car, Tihomir; Tonejc, Antun; Ivkov, Jovica; Stubičar, Mirko; Metikoš-Huković, Mirjana
Al-W amorphous thin films // International Workshop on Physics and Technology of Thin Films, Program and Abstracts / Moshfegh, Ali Reza (ur.).
Teheran: Department of Physics, Sharif University of Technology, 2003. str. 34-35 (predavanje, međunarodna recenzija, sažetak, znanstveni)
Radić, N., Car, T., Tonejc, A., Ivkov, J., Stubičar, M. & Metikoš-Huković, M. (2003) Al-W amorphous thin films. U: Moshfegh, A. (ur.)International Workshop on Physics and Technology of Thin Films, Program and Abstracts.
@article{article, author = {Radi\'{c}, Nikola and Car, Tihomir and Tonejc, Antun and Ivkov, Jovica and Stubi\v{c}ar, Mirko and Metiko\v{s}-Hukovi\'{c}, Mirjana}, editor = {Moshfegh, A.}, year = {2003}, pages = {34-35}, keywords = {aluminum, tungsten, amorphous, thin film}, title = {Al-W amorphous thin films}, keyword = {aluminum, tungsten, amorphous, thin film}, publisher = {Department of Physics, Sharif University of Technology}, publisherplace = {Teheran, Iran} }
@article{article, author = {Radi\'{c}, Nikola and Car, Tihomir and Tonejc, Antun and Ivkov, Jovica and Stubi\v{c}ar, Mirko and Metiko\v{s}-Hukovi\'{c}, Mirjana}, editor = {Moshfegh, A.}, year = {2003}, pages = {34-35}, keywords = {aluminum, tungsten, amorphous, thin film}, title = {Al-W amorphous thin films}, keyword = {aluminum, tungsten, amorphous, thin film}, publisher = {Department of Physics, Sharif University of Technology}, publisherplace = {Teheran, Iran} }




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