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Pregled bibliografske jedinice broj: 1268647

Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation


Iveković, Damjan; Kumar, Sunil; Gajović, Andreja; Čižmar, Tihana; Karlušić, Marko
Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation // Materials, 16 (2023), 4; 1332-1341 doi:10.3390/ma16041332 (međunarodna recenzija, članak, znanstveni)


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Naslov
Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation

Autori
Iveković, Damjan ; Kumar, Sunil ; Gajović, Andreja ; Čižmar, Tihana ; Karlušić, Marko

Izvornik
Materials (1996-1944) 16 (2023), 4; 1332-1341

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
ion irradiation ; graphene ; Raman spectroscopy ; defects

Sažetak
Abstract High-energy heavy ion irradiation is a very useful tool for the nanostructuring of 2D materials because defects can be introduced in a controlled way. This approach is especially attractive for the mass production of graphene nanomembranes when nanopore size and density can easily be tuned by ion irradiation parameters such as ion energy and applied fluence. Therefore, understanding the basic mechanisms in nanopore formation due to high-energy heavy ion impact is of the highest importance. In the present work, we used Raman spectroscopy to investigate the response of bilayer and trilayer graphene to this type of irradiation. Spectra obtained from graphene samples irradiated with 1.8 MeV I, 23 MeV I, 3 MeV Cu, 18 MeV Cu, and 12 MeV Si beams were analysed using the Lucchese model. It was found that the efficiency of damage production scales strongly with nuclear energy loss. Therefore, even for the most energetic 23 MeV I beam, the electronic energy loss does not contribute much to damage formation and ion tracks are unlikely to be formed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
HRZZ-IP-2018-01-2786 - Dinamika defekta u nanomaterijalima: istraživanje putem eksperimenata s ionskim tragovima (DyNaMITE++) (Karlušić, Marko, HRZZ - 2018-01) ( CroRIS)
EK-EFRR-KK.01.1.1.01.0001 - Potpora vrhunskim istraživanjima Centra izvrstnosti za napredne materijale i senzore (CEMS) (CEMS) (Kralj, Marko; Stipčević, Mario; Ivanda, Mile; Jakšić, Milko, EK ) ( CroRIS)

Poveznice na cjeloviti tekst rada:

doi www.mdpi.com

Citiraj ovu publikaciju:

Iveković, Damjan; Kumar, Sunil; Gajović, Andreja; Čižmar, Tihana; Karlušić, Marko
Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation // Materials, 16 (2023), 4; 1332-1341 doi:10.3390/ma16041332 (međunarodna recenzija, članak, znanstveni)
Iveković, D., Kumar, S., Gajović, A., Čižmar, T. & Karlušić, M. (2023) Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation. Materials, 16 (4), 1332-1341 doi:10.3390/ma16041332.
@article{article, author = {Ivekovi\'{c}, Damjan and Kumar, Sunil and Gajovi\'{c}, Andreja and \v{C}i\v{z}mar, Tihana and Karlu\v{s}i\'{c}, Marko}, year = {2023}, pages = {1332-1341}, DOI = {10.3390/ma16041332}, keywords = {ion irradiation, graphene, Raman spectroscopy, defects}, journal = {Materials}, doi = {10.3390/ma16041332}, volume = {16}, number = {4}, issn = {1996-1944}, title = {Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation}, keyword = {ion irradiation, graphene, Raman spectroscopy, defects} }
@article{article, author = {Ivekovi\'{c}, Damjan and Kumar, Sunil and Gajovi\'{c}, Andreja and \v{C}i\v{z}mar, Tihana and Karlu\v{s}i\'{c}, Marko}, year = {2023}, pages = {1332-1341}, DOI = {10.3390/ma16041332}, keywords = {ion irradiation, graphene, Raman spectroscopy, defects}, journal = {Materials}, doi = {10.3390/ma16041332}, volume = {16}, number = {4}, issn = {1996-1944}, title = {Response of Bilayer and Trilayer Graphene to High- Energy Heavy Ion Irradiation}, keyword = {ion irradiation, graphene, Raman spectroscopy, defects} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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