Naslov
Hall effect in Al-W thin films

Autori
Ivkov , Jovica ; Radić, Nikola ; Tonejc, Antun

Izvornik
Solid State Communications (0038-1098) 129 (2004); 369-373

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
amorphous alloys; electronic transport; Hall effect

Sažetak
The Hall coefficient, RH, electrical resistivity, r, and temperature coefficient of resistivity, a, of AlXW100-X (61 Ł x Ł 88) thin films and amorphous-like tungsten films are reported. The AlXW100-X films have been prepared by magnetron codeposition of pure metals onto glass substrate. Films are X-ray amorphous for 63 Ł x Ł 86. Amorphous-like tungsten films (x = 0) were obtained at different sputtering conditions than those applied for preparation of Al-W alloys. The RH value is strongly dependent upon the alloy composition: it changes sign from positive to negative value at x ť 78, and exhibits a maximum for x ť 68 at%. With the decrease of Al content, r steeply increases and exhibits a maximum at x ť 80 at%. Temperature coefficient of resistivity exhibits large negative values, with a well defined minimum at x ť 80. The Hall coefficient of films with 67 Ł x Ł 80 has also been determined at liquid nitrogen temperature, and the values obtained were the same as the room temperature values. Since the value of electrical resistivity of examined alloys in the temperature interval from 77 to 300 K noticeably changes (10%), a significant anomalous contribution to the Hall effect is thus excluded.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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