Pregled bibliografske jedinice broj: 124535
The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs
The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs // Journal of electronic materials, 32 (2003), 10; 1100-1106 doi:10.1007/s11664-003-0094-2 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 124535 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The Impact of Deep Levels on Photocurrent Transients in Semi-Insulating GaAs
Autori
Pavlović, Mladen ; Šantić, Branko ; Desnica-Franković, Dunja Ida ; Radić, Nikola ; Šmuc, Tomislav ; Desnica, Uroš V.
Izvornik
Journal of electronic materials (0361-5235) 32
(2003), 10;
1100-1106
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
photocurrent transients ; deep levels/traps ; semi-insulating GaAs
Sažetak
Photocurrent transients, IPC(t), were studied in semi-insulating GaAs during low-T illumination . Unusual transients, were explained by the model, relating IPC(t) to the deep levels/traps and their occupancy. Such traps were actually detected and characterized by independent measurements of thermally stimulated currents (TSC). Processes of generation, recombination and capture were described by set of coupled differential equations and solved numerically. IPC(t), calculated without any free parameter, well reproduced (through eight orders of magnitude) the experimental transients over the wide range of photon energies and intensities. Best-fit parameters agreed well with those determined from TSC measurements.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Profili:
Branko Šantić
(autor)
Nikola Radić
(autor)
Tomislav Šmuc
(autor)
Mladen Pavlović
(autor)
Uroš Desnica
(autor)
Ida-Dunja Desnica
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
