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Pregled bibliografske jedinice broj: 1243847

Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Aslam, Muhammad Awais; Tran, Tuan Hoang; Supina, Antonio; Siri, Olivier; Meunier, Vincent; Watanabe, Kenji; Taniguchi, Takashi; Kralj, Marko; Teichert, Christian; Sheremet, Evgeniya et al.
Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials // Npj 2D Materials and Applications, 6 (2022), 76, 9 doi:10.1038/s41699-022-00356-y (međunarodna recenzija, članak, znanstveni)

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Naslov
Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Autori
Aslam, Muhammad Awais ; Tran, Tuan Hoang ; Supina, Antonio ; Siri, Olivier ; Meunier, Vincent ; Watanabe, Kenji ; Taniguchi, Takashi ; Kralj, Marko ; Teichert, Christian ; Sheremet, Evgeniya ; Rodriguez, Raul D. ; Matković, Aleksandar

Izvornik
Npj 2D Materials and Applications (2397-7132) 6 (2022); 76, 9

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
2D materials ; graphene ; transition metal dichalcogenides ; nanoribbon ; field effect transistor ; FET

Sažetak
The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, narrow size distribution, and straightforward device integrability. The wide applicability of this technique is demonstrated by fabricating molybednum disulphide, tungsten disulphide, tungsten diselenide, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistance. By relying on self-aligning organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon’s edges. Electrical characterization shows record mobilities and very high ON currents despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way for nanoribbon-based opto-electronic devices.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Projekti:

Ustanove:
Institut za fiziku, Zagreb

Profili:

Avatar Url Antonio Supina (autor)

Avatar Url Marko Kralj (autor)

Poveznice na cjeloviti tekst rada:

doi www.nature.com arxiv.org

Citiraj ovu publikaciju:

Aslam, Muhammad Awais; Tran, Tuan Hoang; Supina, Antonio; Siri, Olivier; Meunier, Vincent; Watanabe, Kenji; Taniguchi, Takashi; Kralj, Marko; Teichert, Christian; Sheremet, Evgeniya et al.
Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials // Npj 2D Materials and Applications, 6 (2022), 76, 9 doi:10.1038/s41699-022-00356-y (međunarodna recenzija, članak, znanstveni)
Aslam, M., Tran, T., Supina, A., Siri, O., Meunier, V., Watanabe, K., Taniguchi, T., Kralj, M., Teichert, C. & Sheremet, E. (2022) Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials. Npj 2D Materials and Applications, 6, 76, 9 doi:10.1038/s41699-022-00356-y.
@article{article, author = {Aslam, Muhammad Awais and Tran, Tuan Hoang and Supina, Antonio and Siri, Olivier and Meunier, Vincent and Watanabe, Kenji and Taniguchi, Takashi and Kralj, Marko and Teichert, Christian and Sheremet, Evgeniya and Rodriguez, Raul D. and Matkovi\'{c}, Aleksandar}, year = {2022}, pages = {9}, DOI = {10.1038/s41699-022-00356-y}, chapter = {76}, keywords = {2D materials, graphene, transition metal dichalcogenides, nanoribbon, field effect transistor, FET}, journal = {Npj 2D Materials and Applications}, doi = {10.1038/s41699-022-00356-y}, volume = {6}, issn = {2397-7132}, title = {Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials}, keyword = {2D materials, graphene, transition metal dichalcogenides, nanoribbon, field effect transistor, FET}, chapternumber = {76} }
@article{article, author = {Aslam, Muhammad Awais and Tran, Tuan Hoang and Supina, Antonio and Siri, Olivier and Meunier, Vincent and Watanabe, Kenji and Taniguchi, Takashi and Kralj, Marko and Teichert, Christian and Sheremet, Evgeniya and Rodriguez, Raul D. and Matkovi\'{c}, Aleksandar}, year = {2022}, pages = {9}, DOI = {10.1038/s41699-022-00356-y}, chapter = {76}, keywords = {2D materials, graphene, transition metal dichalcogenides, nanoribbon, field effect transistor, FET}, journal = {Npj 2D Materials and Applications}, doi = {10.1038/s41699-022-00356-y}, volume = {6}, issn = {2397-7132}, title = {Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials}, keyword = {2D materials, graphene, transition metal dichalcogenides, nanoribbon, field effect transistor, FET}, chapternumber = {76} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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