Pregled bibliografske jedinice broj: 1214810
Ab Initio Quantum Transport Simulations of Monolayer GeS Nanoribbons
Ab Initio Quantum Transport Simulations of Monolayer GeS Nanoribbons // Solid-state electronics, 197 (2022), 108460, 4 doi:10.1016/j.sse.2022.108460 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1214810 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Ab Initio Quantum Transport Simulations of Monolayer GeS Nanoribbons
Autori
Matić, Mislav ; Poljak, Mirko
Izvornik
Solid-state electronics (0038-1101) 197
(2022);
108460, 4
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
ab initio, DFT, maximally localized Wannier functions, GeS, germanium monosulfide, nanoribbon, nanostructure, quantum transport, NEGF, Green functions, nonequilibrium
Sažetak
Monolayer germanium monosulfide (GeS) was recently identified as one of the most promising 2D materials for ultra-scaled FETs. While sub-10 nm monolayer GeS FETs were studied by quantum transport, very little is known about GeS nanoribbons (GeSNRs) or GeSNR FET performance. In this work we employ quantum transport and Hamiltonians with orbital resolution to study the electronic, transport and ballistic device properties of sub-4 nm-wide and ~15 nm-long GeSNRs. While ultra-scaled GeSNR FETs exhibit ION/IOFF of at least ~7 × 105, indicating good switching performance, they also offer modest ballistic ION values of up to ~1.2 mA/μm.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-UIP-2019-04-3493 - Računalno projektiranje nanotranzistora temeljenih na novim 2D materijalima (CONAN2D) (Poljak, Mirko, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
