Pregled bibliografske jedinice broj: 1212114
Effects of Thermal Oxidation on Sensing Properties of Porous Silicon
Effects of Thermal Oxidation on Sensing Properties of Porous Silicon // Chemosensors, 10(9) (2022), 349-349 doi:10.3390/chemosensors10090349 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 1212114 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Effects of Thermal Oxidation on Sensing Properties
of Porous Silicon
Autori
Baran, Nikola ; Renka, Sanja ; Raić, Matea ; Ristić, Davor ; Ivanda, Mile
Izvornik
Chemosensors (2227-9040) 10(9)
(2022);
349-349
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
porous silicon ; gas sensing ; VOC ; oxidation
Sažetak
We report the effects of thermal oxidation on the sensing properties of porous silicon. Porous silicon substrates were prepared by electrochemical etching and thermally oxidized at different temperatures. A comparative EDS analysis shows that porous surfaces oxidized at higher temperatures have higher oxygen-to-silicon ratios. Our results indicate that the chemoresistive response due to the presence of isopropanol vapors at room temperature also increases with an increasing oxidation temperature. The presence of oxygen atoms in the PS layer could both protect the sensor from further atmospheric oxidation and increase its sensitivity.
Izvorni jezik
Engleski
POVEZANOST RADA
Profili:
Sanja Renka
(autor)
Matea Raić
(autor)
Mile Ivanda
(autor)
Davor Ristić
(autor)
Nikola Baran
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus