Pregled bibliografske jedinice broj: 121059
GISAXS study of structural relaxation in amorphous silicon
GISAXS study of structural relaxation in amorphous silicon // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 200 (2003), 110-113 (međunarodna recenzija, članak, znanstveni)
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Naslov
GISAXS study of structural relaxation in amorphous silicon
Autori
Dubček, Pavo ; Pivac, Branko ; Bernstorff Sigrid ; Tonini, Rita ; Corni, Federico ; Ottaviani, Giampiero
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 200
(2003);
110-113
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
amorphous silicon; defects; ion implantation; SAXS
Sažetak
The structural changes induced in single crystal silicon implanted with silicon ions above the amorphisation threshold were studied by Grazing Incidence Small Angle X-ray Scattering technique. Silicon samples were implanted with silicon ions at 30 keV to the dose of 5x1015 atoms/cm2. A well-defined layer of amorphous silicon, thick about 40 nm was formed below the surface. As implanted samples were subsequently relaxed by thermal annealing at 350 C. The analysis have shown that the amorphous layer exhibits a granular structure that develops with annealing. A model will be presented for the film structure changes obtained by data evaluation based on the distorted wave Born approximation.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
