Pregled bibliografske jedinice broj: 118587
Experimental Observation of Optical Amplification in Silicon Nanocrystals
Experimental Observation of Optical Amplification in Silicon Nanocrystals // Towards the First Silicon Laser / Pavesi, L. ; Gaponenko, S. ; Del-Negro, L. (ur.)., 2003. str. 191-196
CROSBI ID: 118587 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Experimental Observation of Optical Amplification in Silicon Nanocrystals
Autori
Ivanda, Mile ; Desnica, Uroš ; White, C.W. ; Kiefer, W.
Vrsta, podvrsta i kategorija rada
Poglavlja u knjigama, znanstveni
Knjiga
Towards the First Silicon Laser
Urednik/ci
Pavesi, L. ; Gaponenko, S. ; Del-Negro, L.
Izdavač
Kluwer Academic Publishers
Godina
2003
Raspon stranica
191-196
ISBN
1-4020-1193-8
Ključne riječi
optical amplification, silicon, nanocrystals, laser
Sažetak
We have measured optical amplification in cw laser pumped silicon nanocrystals. The silicon nanocrystals of 3.5 and 5.5 nm in mean diameter and of 0.5x10¨22 and 2.5x10¨22 cm-3 excess silicon concentration, respectively, were prepared by ion implantation in fused silica substrate followed by high temperature thermal annealing. By using variable strip length method the amplified spontanous emission spectra (A.S.E.) were measured at room temperature using different cw laser excitations wavelength. The stimulated emission was observed on the sample with larger silicon concentration, only. With red excitation the A.S.E. peak at 922 nm of 8 nm full width at half maximum, of net modal gain (g-alpha)=33 cm-1 and strong directionality properties was observed
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb