Pregled bibliografske jedinice broj: 1162885
A PDMS-stamp based deterministic transfer of MoS2 for nanopore devices
A PDMS-stamp based deterministic transfer of MoS2 for nanopore devices // Nanomaterials at the water-energy nexus
Ein Gedi, Izrael, 2019. str. 48-48 (poster, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 1162885 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
A PDMS-stamp based deterministic transfer of MoS2 for nanopore devices
Autori
Thakur, Mukeshchand ; Graf, Michael ; Lihter, Martina ; Macha, Michal ; Radenovic, Aleksandra
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Nanomaterials at the water-energy nexus
/ - , 2019, 48-48
Skup
Dead Sea Water 2019 Workshop
Mjesto i datum
Ein Gedi, Izrael, 04.02.2019. - 07.02.2019
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
PDMS, transfer, MoS2, nanopore, deterministic
Sažetak
Single-layer molybdenum disulfide (MoS2) nanopores are ‘blue-energy’ nanopower generators that can act as an ion-selective membranes for osmotic-power generation. To achieve this, the silicon-based MoS2 nanopore devices require extensive microfabrication that comprise of three major steps: substrate fabrication, transfer of MoS2 and nanopore-drilling in MoS2. Transferring monolayer MoS2 (6.5 Å thickness) is a challenging step in device fabrication as it needs to be clean, precise and deterministic for making viable nanopore devices. Usually polymer-based transfer method is used especially poly(methyl methacrylate) (PMMA) which is time- consuming, require post-transfer cleaning steps and introduce detrimental effects in MoS2. Here we demonstrate an alternative improved transfer method based on polydimethylsiloxane (PDMS)-stamps which aid in the transfer of MoS2 from growth substrate (sapphire) to an arbitrary substrate (e.g. silicon nitride). We show that the unlike other PDMS-based methods which either rely on transferring exfoliated samples or capillary-assisted transfer, the current method is more efficient, selective and offer a precision under an optical microscope and avoids using etching solutions (e.g. KOH). The highlights of the method are that it is transfer is achieved within 5-6 minutes, capable of transferring on approx. 10 devices/stamp, and require no-post transfer cleaning. Furthermore, the method can be used to transfer single-to-multi-layer transfer of MoS2 and can be extended to heterostructures.
Izvorni jezik
Engleski
