Pregled bibliografske jedinice broj: 1146789
Estimating OFF-state Leakage in Silicene Nanoribbon MOSFETs from Complex Bandstructure
Estimating OFF-state Leakage in Silicene Nanoribbon MOSFETs from Complex Bandstructure // Proceedings of the 44th Intl. Convention MIPRO 2021 - MEET (Microelectronics, Electronics and Electronic Technology) / Skala, Karolj (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2021. str. 85-89 doi:10.23919/MIPRO52101.2021.9596876 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 1146789 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Estimating OFF-state Leakage in Silicene Nanoribbon MOSFETs from Complex Bandstructure
Autori
Matić, Mislav ; Leljak, Mihael ; Poljak, Mirko
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 44th Intl. Convention MIPRO 2021 - MEET (Microelectronics, Electronics and Electronic Technology)
/ Skala, Karolj - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2021, 85-89
Skup
44th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2021) ; Microelectronics, Electronics and Electronic Technology (MEET 2021)
Mjesto i datum
Opatija, Hrvatska, 27.09.2021. - 01.10.2021
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
silicene, nanoribbon, MOSFET, OFF-state current, tunneling, complex bandstructure, attenuation
Sažetak
We study the OFF-state leakage current in silicene nanoribbon (SiNR) MOSFETs using atomistic tight-binding Hamiltonians. Complex band structure is computed for these devices and the energy-dependent tunneling attenuation is analyzed. We investigate both the tunneling and thermionic components of the OFF-state leakage for SiNR MOSFETs with channel lengths under 15 nm, using under-the-barrier and top-of-the-barrier models. The current components and attenuation are investigated for various nanoribbon widths and lengths. We report a limited design space where SiNR dimensions provide acceptable OFF-state leakage according to the goals set by the International Roadmap for Devices and Systems (IRDS).
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
HRZZ-UIP-2019-04-3493 - Računalno projektiranje nanotranzistora temeljenih na novim 2D materijalima (CONAN2D) (Poljak, Mirko, HRZZ ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
