Naslov
M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

Autori
Capan, Ivana ; Brodar, Tomislav ; Bernat, Robert ; ...Coutinho, Jose ;

Izvornik
Journal of applied physics (0021-8979) 130 (2021), 12; 125703, 10

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
defects ; DLTS ; modelling:

Sažetak
We report on a bistable defect known as M- center, here introduced in n-type 4H-SiC by 2 MeV He ion implantation. Deep levels of the M-center are investigated by means of junction spectroscopy techniques, namely, deep level transient spectroscopy (DLTS) and isothermal DLTS. In addition to previously reported three deep levels arising from the M-center (labeled as M1, M2, and M3), we provide direct evidence on the existence of a fourth transition (labeled as M4) with an activation energy of 0.86 eV. Activation energies and apparent capture cross sections for all four metastable defects are determined. From first-principles calculations, it is shown that the observed features of the M-center, including the charge state character, transition levels, bi-stability dynamics, and annealing, are all accounted for by a carbon self-interstitial.

Izvorni jezik
Engleski

POVEZANOST RADA