Pregled bibliografske jedinice broj: 1113289
Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: structure and photoelectric conversion
Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: structure and photoelectric conversion // Book af abstracts
Budimpešta, Mađarska, 2020. str. 130-130 (poster, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 1113289 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Ge quantum dot lattices in alumina prepared by
nitrogen assisted deposition: structure and
photoelectric conversion
Autori
Tkalčević, Marija ; Šarić, Iva ; Basioli, Lovro ; Mičetić, Maja
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Book af abstracts
/ - , 2020, 130-130
Skup
18th International Conference on Thin Films and 18th Joint Vacuum Conference
Mjesto i datum
Budimpešta, Mađarska, 22.11.2020. - 26.11.2020
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
germanium QDs ; multilayer deposition ; multiple exciton generation
Sažetak
Thin films comprising of three dimensional germanium (Ge) quantum dot lattices formed by nitrogen (N) assisted magnetron sputtering deposition in alumina (Al2O3) matrix have been studied for light harvesting purposes. In order to expand the application of this material it is necessary to reduce germanium oxidation and to achieve stabilization of germanium/alumina interface. [1, 2] Effects of tuning the nitrogen concentration, substrate temperature and Ge sputtering power during the films preparation are monitored. It is shown that the N presence not only reduces germanium oxidation during annealing but also affects the size and arrangement of germanium quantum dots. Deposition temperature and Ge sputtering power affect Ge quantum dot size, separation and the regularity of their positions. Consequently, optical and electrical properties of the films, especially their photo- current, strongly depend on the deposition conditions. Additionally, the film deposited at 500 °C shows the multiple exciton generation and significant photo response, so it could be used as a sensitive layer for photodetectors or photovoltaic light harvesting devices. We have shown how to manipulate the photogeneration properties and its dependence on the light energy by materials structure, especially on the Ge QD size and its internal structure. The above mentioned effects and the material itself could be very useful in light harvesting and production of heavy –metal free high-efficient solar cells.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Interdisciplinarne prirodne znanosti, Kemijsko inženjerstvo
POVEZANOST RADA
Projekti:
EK-KK.01.2.1.01.0115 - Unaprijeđenje solarnih ćelija i modula kroz istraživanje i razvoj (Juraić, Krunoslav, EK ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb,
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