Pregled bibliografske jedinice broj: 1112542
Raman scattering enhancement of silicon by photonic nanojet of a microsphere
Raman scattering enhancement of silicon by photonic nanojet of a microsphere // Book of abstracts / 18th International conference on thin films & 18th Joint vacuum conference / Pécz, Béla ; Bohátka, Sándor ; Csík, Attila (ur.).
Budimpešta, 2020. str. 54-54 (predavanje, podatak o recenziji nije dostupan, sažetak, znanstveni)
CROSBI ID: 1112542 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Raman scattering enhancement of silicon by photonic
nanojet of a microsphere
Autori
Gašparić, Vlatko ; Rigó, István ; Ristić, Davor ; Gebavi, Hrvoje ; Veres, Miklós ; Ivanda, Mile
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Book of abstracts / 18th International conference on thin films & 18th Joint vacuum conference
/ Pécz, Béla ; Bohátka, Sándor ; Csík, Attila - Budimpešta, 2020, 54-54
Skup
18th International conference on thin films ; 18th Joint vacuum conference
Mjesto i datum
Online, 22.11.2020. - 26.11.2020
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Podatak o recenziji nije dostupan
Ključne riječi
optical microsphere ; photonic nanojet ; Raman scattering ; GLMT ; SERS
Sažetak
A new method for enhancing the Raman scattering signal has emerged recently, based on dielectric enhancement. Especially promising is the dielectric method based on microspheres and photonic nanojet – a narrow highly concentrated beam of light on the shadow side of the irradiated microsphere. The formation of the photonic nanojet is presented through Generalized Lorenz-Mie theory (GLMT), together with important properties and applications. Simulation images of the photonic nanojet are shown, both as solutions of GLMT equations, and numerical simulations. Furthermore, the photonic nanojet is presented as Raman scattering enhancement method different substrates (bulk, film on bulk, etc.) with microspheres and microspheres with a stem. The variation of the incident beam position is discussed, where raw enhancement reaches highest value (5.7x) for 0.50 NA objective, when the incident beam was focused 9 μm below the top of the 5-μm microsphere. Moreover, the combined dielectric enhancement with metallic surface-enhanced Raman scattering (SERS) is presented, together with future plans.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb