Ge quantum dot lattices in alumina prepared by nitrogen assisteddeposition: Structure and photoelectric conversion efficiency

Tkalčević, Marija; Basioli, Lovro; Salamon, Krešimir; Šarić, Iva; Sancho-Parramon, Jordi; Bubaš, Matej; Bogdanović-Radović, Ivančica; Bernstorff, Sigrid; Fogarassy, Zsolt; Balazsi, Katalin; Petravić, Mladen; Mičetić, Maja

doi:10.1016/j.solmat.2020.110722

Pregled bibliografske jedinice broj: 1076334

Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency

Tkalčević, Marija; Basioli, Lovro; Salamon, Krešimir; Šarić, Iva; Sancho-Parramon, Jordi; Bubaš, Matej; Bogdanović-Radović, Ivančica; Bernstorff, Sigrid; Fogarassy, Zsolt; Balazsi, Katalin et al.

Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency // Solar energy materials and solar cells, 218 (2020), 110722, 10 doi:10.1016/j.solmat.2020.110722 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 1076334 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency

Autori
Tkalčević, Marija ; Basioli, Lovro ; Salamon, Krešimir ; Šarić, Iva ; Sancho-Parramon, Jordi ; Bubaš, Matej ; Bogdanović-Radović, Ivančica ; Bernstorff, Sigrid ; Fogarassy, Zsolt ; Balazsi, Katalin ; Petravić, Mladen ; Mičetić, Maja

Izvornik
Solar energy materials and solar cells (0927-0248) 218 (2020); 110722, 10

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge QDs ; Quantum efficiency ; QD lattices ; N-assisted deposition ; Spectral response ; Multiple exciton generation

Sažetak
Thin films comprising three dimensional germanium (Ge) quantum dot lattices formed by nitrogen (N) assisted magnetron sputtering deposition in alumina (Al2O3) matrix have been studied for light harvesting purposes. In order to expand the application of this material it is necessary to reduce germanium oxidation and to achieve stabilization of the germanium/alumina interface. Effects of tuning the N concentration, substrate temperature and Ge sputtering power during the films preparation are monitored. It is shown that the N presence not only reduces Ge oxidation during annealing but also affects the internal structure, size and arrangement of Ge quantum dots. Additionally, the deposition temperature and Ge sputtering power are used to tune the Ge quantum dot size, separation and the regularity of their positions. It is shown that the optical and electrical properties of the films, especially their photo-induced current, and quantum efficiency are strongly tunable by the deposition conditions. Moreover, a significant photo-response and effect of multiple exciton generation effect is observed. The materials presented could be used as a sensitive layer for photodetectors or photovoltaic light harvesting devices. The presented tools can be used for future fine tuning of the material to achieve the optimal quantum efficiency.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA

Projekti:
EK-KK.01.2.1.01.0115 - Unaprijeđenje solarnih ćelija i modula kroz istraživanje i razvoj (Juraić, Krunoslav, EK ) ( CroRIS)

Ustanove:
Institut "Ruđer Bošković", Zagreb,
Sveučilište u Rijeci

Profili:

Matej Bubaš (autor)