Pregled bibliografske jedinice broj: 1048966
MBE growth and properties of low-density InAs/GaAs quantum dot structures.
MBE growth and properties of low-density InAs/GaAs quantum dot structures. // Crystal Research and Technology, 46 (2011), 8; 801-804 doi:10.1002/crat.201000622 (međunarodna recenzija, članak, ostalo)
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Naslov
MBE growth and properties of low-density InAs/GaAs quantum dot structures.
Autori
Trevisi, G. ; Seravalli, L. ; Frigeri, P. ; Bocchi, C. ; Grillo, V. ; Nasi, L. ; Suárez, I. ; Rivas Gongora, D. ; Muñoz-Matutano, G. ; Martínez-Pastor, J.
Izvornik
Crystal Research and Technology (0232-1300) 46
(2011), 8;
801-804
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, ostalo
Ključne riječi
low-dimensional semiconductor systems, molecular-beam epitaxy, structural and optical characterization
Sažetak
We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus