Pregled bibliografske jedinice broj: 1048962
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots.
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots. // Journal of applied physics, 113 (2013), 194306; 1-8 doi:.org/10.1063/1.4805351 (međunarodna recenzija, članak, znanstveni)
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Naslov
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots.
Autori
G. Trevisi, I. Suárez, L. Seravalli1, Rivas Gongora David, P. Frigeri, G. Muñoz-Matutano, V. Grillo, L. Nasi, and J. Martínez-Pastor.
Izvornik
Journal of applied physics (0021-8979) 113
(2013), 194306;
1-8
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
bimodal-sized InAs/(In)GaAs quantum dots, thermal population, dark states
Sažetak
We discuss this behavior in terms of alloy disorder and increased density of point defects in the InGaAs pseudomorphic layer
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
