Pregled bibliografske jedinice broj: 1048956
Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths
Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths // Crystal Research and Technology, 49 (2014), 8; 540-545 doi:10.1002/crat.201300395 (međunarodna recenzija, članak, znanstveni)
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Naslov
Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths
Autori
Seravalli, Luca ; Trevisi, Giovanna ; Muñoz- Matutano, Guillermo ; Rivas Gongora, David ; Martinez-Pastor, Juan ; Frigeri, Paola
Izvornik
Crystal Research and Technology (0232-1300) 49
(2014), 8;
540-545
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
metamorphic quantum dots, QD growth techniques, ow-density InAs QD structures
Sažetak
We report on the design and molecular beam epitaxy (MBE) growth of InAs QDs on InGaAs metamorphic buffers (MBs) by the deposition of sub-critical InAslayers followed by an annealing step: the use of MBs al-lows for the redshifting of the QD emission in the whole range 1.3 – 1.55μm
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
