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Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari
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Razvoj karijera mladih istraživača - izobrazba novih doktora znanosti, mentor: T. Suligoj
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Akcije
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs // IEEE transactions on electron devices, 65 (2018), 7; 2784-2789. doi: 10.1109/TED.2018.2838681
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors // Proceedings of the 3rd Joint EUROSOI-ULIS Conference 2017. 2017. str. 136-139
Sabina Krivec, Mirko Poljak, Tomislav Suligoj
Band-Structure of Ultra-Thin InGaAs Channels: Impact of Biaxial Strain and Thickness Scaling // MIPRO / Biljanović, Petar (ur.). 2017. str. 74-80
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials // Solid-state electronics, 115 (2016), 1; 109-119. doi: 10.1016/j.sse.2015.08.009
Poljak, Mirko ; Krivec, Sabina ; Suligoj, Tomislav
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels // Proceedings of the First Joint EUROSOI-ULIS Conference 2015 / Palestri, Pierpaolo ; Gnani, Elena (ur.). Bolonja, 2015. str. 117-120
Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.). Rijeka, 2015. str. 25-30
Krivec, Sabina ; Prgić, Hrvoje ; Poljak, Mirko ; Suligoj, Tomislav
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.). Rijeka, 2014. str. 51-56
