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Grujić, Jovan ; Jovanović, Vladimir ; Tasić, Goran ; Savić, Andrija ; Stojiljković, Aleksandra ; Matić, Siniša ; Lepić, Milan ; Rotim, Krešimir ; Rasulić, Lukas
Giant Cavernous Malformation with Unusually Aggressive Clinical Course: a Case Report // Acta clinica Croatica, 59 (2020), 1; 183-187. doi: 10.20471/acc.2020.59.01.24 |
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Poljak, Mirko ; Jovanović, Vladimir ; Grgec, Dalibor ; Suligoj, Tomislav
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling // IEEE transactions on electron devices, 59 (2012), 6; 1636-1643. doi: 10.1109/TED.2012.2189217 |
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Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.). Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 |
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Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.). Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 156-157 |
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Nanver, Lis K. ; Jovanović, Vladimir ; Biasotto, Cleber ; Moers, Juergen ; Gruetzmacher, Detlev ; Zhang, Jianjun ; Hrauda, Nina ; Stoffel, Mathieu ; Pezzoli, Fabio ; Schmidt, Oliver G. et al.
Integration of MOSFETs with SiGe dots as stressor material // Solid-state electronics, 60 (2011), 1; 75-83. doi: 10.1016/j.sse.2011.01.038 |
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Biasotto, Cleber ; Gonda, Viktor ; Nanver, Lis K. ; Scholtes, Tom L.M. ; van der Cingel, Johan ; Vidal, Daniel ; Jovanović, Vladimir
Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions // Journal of Electronic Materials, 40 (2011), 11; 2187-2196. doi: 10.1007/s11664-011-1734-6 |
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Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Solid-state electronics, 65/66 (2011), 130-138. doi: 10.1016/j.sse.2011.06.039 |
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Hrauda, Nina ; Zhang, Jianjun ; Wintersberger, Eugen ; Etzelstorfer, Tanja ; Mandl, Bernhard ; Stangl, Julian ; Carbone, Dina ; Holý, Vaclav ; Jovanović, Vladimir ; Biasotto, Cleber et al.
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor // Nano letters, 11 (2011), 7; 2875-2880. doi: 10.1021/nl2013289 |
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Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.). Zagreb: Denona, 2011. str. 71-76 |
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Jovanović, Vladimir ; Biasotto, Cleber ; Nanver, Lis K. ; Moers, Juergen ; Grützmacher, Detlev ; Gerharz, Julian ; Mussler, Gregor ; van der Cingel, Johan ; Zhang, Jianjun ; Bauer, Guenther et al.
MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility // Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long (ur.). 2010. str. 926-928 |
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