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Bernat, Robert ; Capan, Ivana ; Bakrač, Luka ; Brodar, Tomislav ; Makino, Takahiro ; Ohshima, Takeshi ; Pastuović, Željko ; Sarbutt, Adam
Response of 4H-SiC Detectors to Ionizing Particles // Crystals, 11 (2021), 1; 10, 13. doi: 10.3390/cryst11010010 |
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Bernat, Robert ; Bakrač, Luka ; Radulović, Vladimir ; Snoj, Luka ; Makino, Takahiro ; Ohshima, Takeshi ; Pastuović, Željko ; Capan, Ivana
4H-SiC Schottky barrier diodes for efficient thermal neutron detection // Materials, 14 (2021), 17; 5105, 10. doi: 10.3390/ma14175105 |
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Coutinho, J ; Gouveia, J.D. ; Makino, T. ; Ohshima, T. ; Pastuović, Željko ; Bakrač, Luka ; Brodar, Tomislav ; Capan, Ivana
M center in 4H-SiC is a carbon self-interstitial // Physical review. B, 103 (2021), 180102, 4. doi: 10.1103/PhysRevB.103.L180102 |
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Radulović, Vladimir ; Ambrožič, Klemen ; Snoj, Luka ; Capan, Ivana ; Brodar, Tomislav ; Ereš, Zoran ; Pastuović, Željko ; Sarbutt, Adam ; Ohshima, Takeshi ; Yamazaki, Yuichi et al.
E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor // EPJ web of conferences / Lyoussi, A. ; Giot, M. ; Carette, M. et al. (ur.). 2020. doi: 10.1051/epjconf/202022507007 |
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Coutinho, José ; Torres, Vitor J. B. ; Capan, Ivana ; Brodar, Tomislav ; Ereš, Zoran ; Bernat, Robert ; Radulovič, Vladimir ; Ambrožič, Klemen ; Snoj, Luka ; Pastuović, Željko et al.
Silicon carbide diodes for neutron detection // Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 986 (2020), 164793, 55. doi: 10.1016/j.nima.2020.164793 |
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Radulović, Vladimir ; Yamazaki, Yuichi ; Pastuović, Željko ; Sarbutt, Adam ; Ambrožič, Klemen ; Bernat, Robert ; Ereš, Zoran ; Coutinho, José ; Ohshima, Takeshi ; Capan, Ivana et al.
Silicon carbide neutron detector testing at the JSI TRIGA reactor for enhanced border and port security // Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 972 (2020), 164122, 8. doi: 10.1016/j.nima.2020.164122 |
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Brodar, Tomislav ; Bakrač, Luka ; Capan, Ivana ; Ohshima, Takeshi ; Snoj, Luka ; Radulović, Vladimir ; Pastuović, Željko
Depth Profile Analysis of Deep Level Defects in 4H- SiC Introduced by Radiation // Crystals, 10 (2020), 9; 845, 16. doi: 10.3390/cryst10090845 |
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Ditalia Tchernij, S. ; Lühmann, T. ; Corte, E. ; Sardi, F. ; Picollo, F. ; Traina, P. ; Brajković, Marko ; Crnjac, Andreo ; Pezzagna, S. ; Pastuović, Željko et al.
Fluorine-based color centers in diamond // Scientific reports, 10 (2020), 21537, 7. doi: 10.1038/s41598-020-78436-6 |
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Vittone, Ettore ; Garcia Lopez, Javier ; Jakšić, Milko ; Jimenez Ramos, Carmen ; Lohstroh, Annika ; Pastuović, Željko ; Rath, Shyama ; Siegele, Reiner ; Skukan, Natko ; Vizkelethy, Georgy et al.
Determination of radiation hardness of silicon diodes // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 449 (2019), 6-10. doi: 10.1016/j.nimb.2019.04.032 |
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Radulović, Vladimir ; Ambrožič, Klemen ; Snoj, Luka ; Capan, Ivana ; Brodar, Tomislav ; Ereš, Zoran ; Pastuović, Željko ; Sarbutt, Adam ; Ohshima, Takeshi ; Yamazaki, Yuichi et al.
E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor // NENE 2018 - The 27th International Conference Nuclear Energy for New Europe. 2018 |
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