Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT) (CROSBI ID 674808)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Žilak, Josip ; Koričić, Marko ; Osrečki, Željko ; Šimić, Marko ; Suligoj, Tomislav
engleski
Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT)
Noise parameters of the Horizontal Current Bipolar Transistor (HCBT) Technology are examined for the first time. Impact of technological parameters (i.e., three different collector doping profiles) on the noise performance is analyzed and explained. The HCBT with the uniform n-collector profile has the smallest minimum noise figure (NF min ) of 0.91 dB at f = 0.9 GHz and 1.09 dB at f = 1.5 GHz, while the HCBT with the low-doped n-collector has the highest associated gain implying the best noise-gain tradeoff. All three HCBTs have the optimum collector current (ICopt) at the lowest NF min of around 5 mA and 10 mA at 0.9 GHz and 1.5 GHz, respectively, as well as the optimum impedance Zopt close to 50 Ω. Several low-noise amplifiers are fabricated with NF = 1.22 dB and power gain up to 17.2 dB at 0.9 GHz.
BiCMOS technology, Horizontal Current Bipolar Transistor (HCBT), minimum noise figure (NFmin), optimum noise impedance (Zopt), low noise amplifier (LNA)
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Podaci o prilogu
186-189.
2018.
objavljeno
10.1109/BCICTS.2018.8551146
Podaci o matičnoj publikaciji
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Institute of Electrical and Electronics Engineers (IEEE)
978-1-5386-6502-2
Podaci o skupu
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
predavanje
15.10.2018-17.10.2018
San Diego (CA), Sjedinjene Američke Države