Napredna pretraga

Pregled bibliografske jedinice broj: 979359

Hall effect study of the κ -(ET) 2X family : Evidence for Mott-Anderson localization


Čulo, Matija; Tafra, Emil; Mihaljević, Bojan; Basletić, Mario; Kuveždić, Marko; Ivek, Tomislav; Hamzić, Amir; Tomić, Silvia; Hiramatsu, T.; Yoshida, Y. et al.
Hall effect study of the κ -(ET) 2X family : Evidence for Mott-Anderson localization // Physical review. B., 99 (2019), 4; 045114, 10 doi:10.1103/physrevb.99.045114 (međunarodna recenzija, članak, znanstveni)


Naslov
Hall effect study of the κ -(ET) 2X family : Evidence for Mott-Anderson localization

Autori
Čulo, Matija ; Tafra, Emil ; Mihaljević, Bojan ; Basletić, Mario ; Kuveždić, Marko ; Ivek, Tomislav ; Hamzić, Amir ; Tomić, Silvia ; Hiramatsu, T. ; Yoshida, Y. ; Saito, G. ; Schlueter, J.A. ; Dressel, M. ; Korin-Hamzić, Bojana

Izvornik
Physical review. B. (2469-9950) 99 (2019), 4; 045114, 10

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Organic conductors ; Hall effect ; Mott-Anderson localization

Sažetak
We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ–(ET)2X, where X=Ag2(CN)3 and B(CN)4 and compare them with the results for X=Cu2(CN)3. All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X=Cu2(CN)3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X=B(CN)4 shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
HRZZ-IP-2013-11-1011 - Jako korelirani elektroni u slojnim organskim materijalima i manganitima: niskofrekventna pobuđenja i nelinearna dinamika (Silvia Tomić, )

Ustanove
Institut za fiziku, Zagreb,
Prirodoslovno-matematički fakultet, Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati