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Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

This paper presents the characterization of the electrically active defects created by epithermal and fast neutrons in epitaxial n-type 4H-SiC material using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutron irradiation introduces additional simple defect complexes, with energy levels at EC – 0.40 eV and EC – 0.70 eV.

Epitaxial n-type 4H-SiC ; Laplace DLTS ; Defects ; Neutron irradiation

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