Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements (CROSBI ID 665058)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Osrečki, Željko ; Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav
engleski
Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements
Load-pull and source-pull characterization of packaged Horizontal Current Bipolar Transistor (HCBT) is performed at 2.4 GHz. A fully- calibrated, automated loadpull measurement setup is used to determine the optimal matching conditions at both input and output of the transistor, considering maximum output power and efficiency. Three classes of power amplifier (PA) operation are investigated, namely Class A, Class AB and Class B. Matching impedances and bias points for all classes of operation are optimized by employing the load- pull and source-pull contours for output power and collector efficiency. With the output power of more than 22 dBm and gain of 11 dB, HCBT shows a great potential for RF power amplifier design for modern wireless communication standards, such as Wi-Fi and 4G LTE.
Horizontal current bipolar transistor (HCBT), load-pull, source-pull, RF power amplifier
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Podaci o prilogu
72-77.
2018.
objavljeno
10.23919/mipro.2018.8400014
Podaci o matičnoj publikaciji
Proceedings of the 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Institute of Electrical and Electronics Engineers (IEEE)
978-953-233-095-3
Podaci o skupu
MIPRO 2018
predavanje
21.05.2018-25.05.2018
Opatija, Hrvatska