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Electronic structure and transport properties of (TiZrNbCu)1-xNix metallic glasses

We present the results of ongoing comprehensive study of the electronic properties of (TiZrNbCu)1- xNix metallic glasses performed in a broad composition range x encompassing both, the high entropy (HE) range, x ≤ 0.25, and conventional Ni- base alloy concentration range, x ≥ 0.35. The electronic structure (ES) studied by photoemission spectroscopy and low temperature specific heat (LTSH) [1] reveal the split-band structure of the density of states (DoS) inside the valence band with the d- electron of Ti, Zr, Nb and also Ni present in DoS at the Fermi level N(EF), whereas LTSH and present magnetoresistivity results show that variation of N(EF) with x changes in Ni-base regime. The variation of the superconducting transition temperatures, TC ≤ 1.6 K with x closely follows that of N(EF) as is usual in disordered transition metal alloys [2]. The electrical resistivities of all alloys are high (> 150 µΩ cm) and accordingly decrease with increasing temperature over most of the explored temperature range, and their temperature dependence seems dominated by the weak localization effects over a broad temperature range (10 – 300 K). The preliminary study of the Hall effect shows that the Hall coefficient RH > 0 and in the HE concentration range change little with x. The results are compared with these for corresponding binary metallic glasses. [1] I. A. Figueroa, et al., J. Alloys Compd. 745, 455 (2018) [2] E. Tafra, et al., J. Phys.: Condens. Matter 20, 425215 (2008)

HEA, metallic glasses, electronic properties

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