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The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs

The electron mobility in strained ultra-thin InGaAs-on-InP MOSFETs is investigated combining band-structure and physics-based modeling including all relevant scattering mechanisms and effects. The most important effect is Fermi-level pinning which occurs due to high density of interface states at InGaAs/oxide interface. Different interface states densities are considered in order to investigate impact of interface states on electron mobility in biaxially strained ultra-thin InGaAs-on-InP structures. We report the tensile biaxial strain values that can alleviate the unfavorable impact of interface states charge on electron transport.

Electron mobility, Fermi-level pinning (FLP), InGaAs, InP, interface states charge, strain, ultra-thin body

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