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Properties of Silicon Nanowires Studied by TEM-STM

Nanowires are expected to play an important role in future electronic and optical devices as well as in nanoelectromechanical systems (NEMS). Here, we report on silicon nanowires grown on Au tip by a novel supercritical fluid solution-phase approach by the degrading diptehylsilane. To measure the electrical or mechanical properties of such nanowires is a difficult task due to the small sizes. Addressing this problem, we used an in -situ probing technique, TEM-STM, which is a combination of the scanning tunneling microscope (STM) and the transmission electron microscope (TEM). The TEM showed that the Si nanowires were several micrometers long and 40-90 nm wide. The current-voltage curves showed linear as well as highly non-linear behaviour. The mechanics were studied by electrostatic deflection, van der Waals interactions, and adhesion area measurements. The force constants of the nanowire were between 0.005-0.07 N/m.

Scanning Probe Microscopy, Nanowire ; Silicon ; Mechanical, Electronic

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