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Synthesis of Semiconducting Nanowires for Microelectronic Applications

Recent interest in low-dimensional semiconductor materials has been motivated by the push for miniaturisation of electronic and optoelectronic devices and a need to understand the fundamentals of nanoscale chemistry and physics. In particular, the ability to pack large numbers of semiconductor nanowires into specific architectures, and the unique transport properties associated with these arrays, is expected to lead to the next generation of integrated chips. Nanowires have previously been synthesised either as single element filaments such as silicon or germanium or as metal carbides or nitrides such as SiC and GaN. While these nanowires display interesting optical properties such as plasmon propagation they are of limited electronic use as semiconductors. In addition, previous methods to prepare high quality nanomaterials have typically focused on laser ablation or chemical vapour deposition. The harsh conditions and experimental procedures that are required have proven disadvantageous to these preparation routes. Here we report on a clean and facile method for growing nanowires in supercritical fluids. Both germanium-doped and phosphorus-doped silicon nanowires were synthesised and probed as semiconducting materials.

Supercritical Fluid ; Nanowire ; Microelectronics ; Semiconductor

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