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Solution-grown Silicon Nanowires Studied by TEM-STM

Nanowires are expected to play an important role in future electronic and optical devices as well as in nanoelectromechanical systems (NEMS). Here, we report on silicon nanowires grown by a novel supercritical fluid solution-phase approach by the degrading of semiconductor precursors. To measure the electrical or mechanical properties of such nanowires is a difficult task due to the small sizes. Addressing this problem, we used an in-situ probing technique, TEM-STM, which is a combination of the scanning tunneling microscope (STM) and the transmission electron microscope (TEM). The TEM showed that the Si nanowires were several micrometers long and about 40 nm wide. The current-voltage curves showed both linear as well as highly non-linear behaviour. The mechanics were studied by electrostatic deflection, van der Waals interactions, and adhesion area measurements. The force constants of the nanowire were between 0.02-0.1 N/m.

Nanowire ; Silicon ; Scanning Electron Microscopy ; Transmission Electron Microscopy

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