engleski

Growth of graphene from benzene on Ir(111)

The study of producing graphene extends from mechanically exfoliated graphene fl akes transferred to diff erent substrates to chemical vapor deposition (CVD) growth process on diff erent metal surfaces. The most frequently used carbon source in CVD process is ethylene. To obtain a single domain (R0) graphene on Ir(111) surface from ethylene high growth temperature (~1000°C) is required. As already reported, reduction of growth temperature is realized by using aromatic carbon sources in CVD process on Cu(111) in the region of atmospheric pressure [1]. The use of benzene reduces the growth temperature as low as 300°C. This fi nding opens the opportunity to the possibility of low temperature growth on Ir(111), but in ultra high vacuum (UHV) conditions. To investigate this possibility we used scanning tunneling microscopy (STM) and low energy electron diff raction (LEED). Our fi ndings point to the CVD growth with predominantly R0 oriented graphene achieved at 700°C.

graphene

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