TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design (CROSBI ID 656921)
Prilog sa skupa u zborniku | prošireni sažetak izlaganja sa skupa
Podaci o odgovornosti
Tihomir Knežević ; Lis K. Nanver ; Tomislav Suligoj
engleski
TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design
Developed TCAD-based simulation environment is exploited for calculation of the DCR in a 2D structure showing the critical positions in the design of a lateral device. In the analyzed standoff breakdown suppression design, the position of the maximum DCR and the total DCR were calculated. The optimal parameters of the design were proposed with respect to the minimization of the total DCR.
TCAD, InGaAs/InP, SPAD, avalanche diodes
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Podaci o prilogu
20-21.
2017.
objavljeno
Podaci o matičnoj publikaciji
EMN Mauritius Meeting 2017 Program & Abstract
Podaci o skupu
EMN Mauritius Meeting 2017
pozvano predavanje
27.11.2017-30.11.2017
Port Louis, Mauricijus
