The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors (CROSBI ID 244407)
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Podaci o odgovornosti
Poljak, Mirko ; Suligoj, Tomislav
engleski
The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors
Transport properties of realistic phosphorene nanoribbons (PNRs) with edge defects are studied by using statistical atomistic quantum transport simulations. Regarding the impact of nanoribbon width downscaling and increasing of edge defect percentage, we show that PNRs exhibit qualitatively similar behavior of the ON and OFF state conductance, and of the ON-OFF conductance ratio as graphene nanoribbons (GNRs). However, we demonstrate that PNRs are superior to GNRs in terms of the absolute values of the conductance parameters, and that PNRs are much more immune to edge defects than their graphene counterparts. This study identifies PNRs as a more promising channel material than GNRs for the extremely-scaled post-silicon transistor technology.
phosphorene nanoribbons, quantum transport, atomistic simulation, edge defects, size scaling, conductance
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Podaci o izdanju
65 (1)
2018.
290-294
objavljeno
0018-9383
1557-9646
10.1109/TED.2017.2771345