Development of III-Nitride HEMTs on CVD Diamond Substrates (CROSBI ID 650494)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Faili, F. ; Diduck, Q. ; Babić, D. I. ; Francis, D. ; Wasserbauer, J. ; Ejeckam, F. ; Blevins, J. D.
engleski
Development of III-Nitride HEMTs on CVD Diamond Substrates
AlGaN/GaN high electron mobility transistors (HEMT) semiconductor technology holds promise for revolutionary improvements in the cost, size, weight, and performance of a broad range of military and commercial microelectronics. However, exploiting the true capabilities of GaN is a compromise between the desired RF performance and the realities of current thermal solutions. In this work we present integration details and performance of AlGaN/GaN high-electronmobility transistors (HEMTs) fabricated on freestanding and mounted, heat-spreading diamond substrates.
GaN, high-electron-mobility transistor (HEMT), CVD diamond, thermal management
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Podaci o prilogu
2011.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the CS MANTECH Conference
Podaci o skupu
CS MANTECH Conference
predavanje
16.05.2011-19.05.2011
Palm Springs (CA), Sjedinjene Američke Države