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Development of III-Nitride HEMTs on CVD Diamond Substrates (CROSBI ID 650494)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Faili, F. ; Diduck, Q. ; Babić, D. I. ; Francis, D. ; Wasserbauer, J. ; Ejeckam, F. ; Blevins, J. D. Development of III-Nitride HEMTs on CVD Diamond Substrates // Proceedings of the CS MANTECH Conference. 2011

Podaci o odgovornosti

Faili, F. ; Diduck, Q. ; Babić, D. I. ; Francis, D. ; Wasserbauer, J. ; Ejeckam, F. ; Blevins, J. D.

engleski

Development of III-Nitride HEMTs on CVD Diamond Substrates

AlGaN/GaN high electron mobility transistors (HEMT) semiconductor technology holds promise for revolutionary improvements in the cost, size, weight, and performance of a broad range of military and commercial microelectronics. However, exploiting the true capabilities of GaN is a compromise between the desired RF performance and the realities of current thermal solutions. In this work we present integration details and performance of AlGaN/GaN high-electronmobility transistors (HEMTs) fabricated on freestanding and mounted, heat-spreading diamond substrates.

GaN, high-electron-mobility transistor (HEMT), CVD diamond, thermal management

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Podaci o prilogu

2011.

objavljeno

Podaci o matičnoj publikaciji

Proceedings of the CS MANTECH Conference

Podaci o skupu

CS MANTECH Conference

predavanje

16.05.2011-19.05.2011

Palm Springs (CA), Sjedinjene Američke Države

Povezanost rada

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