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Development of III-Nitride HEMTs on CVD Diamond Substrates


Faili, F.; Diduck, Q.; Babić, D. I.; Francis, D.; Wasserbauer, J.; Ejeckam, F.; Blevins, J. D.
Development of III-Nitride HEMTs on CVD Diamond Substrates // Proceedings of the CS MANTECH Conference
Palm Springs, California, SAD, 2011. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Development of III-Nitride HEMTs on CVD Diamond Substrates

Autori
Faili, F. ; Diduck, Q. ; Babić, D. I. ; Francis, D. ; Wasserbauer, J. ; Ejeckam, F. ; Blevins, J. D.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the CS MANTECH Conference / - , 2011

Skup
CS MANTECH Conference

Mjesto i datum
Palm Springs, California, SAD, May 16-19 (2011)

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
GaN, high-electron-mobility transistor (HEMT), CVD diamond, thermal management

Sažetak
AlGaN/GaN high electron mobility transistors (HEMT) semiconductor technology holds promise for revolutionary improvements in the cost, size, weight, and performance of a broad range of military and commercial microelectronics. However, exploiting the true capabilities of GaN is a compromise between the desired RF performance and the realities of current thermal solutions. In this work we present integration details and performance of AlGaN/GaN high-electronmobility transistors (HEMTs) fabricated on freestanding and mounted, heat-spreading diamond substrates.

Izvorni jezik
Engleski



POVEZANOST RADA


Profili:

Avatar Url Dubravko Babić (autor)

Avatar Url Branko Wasserbauer (autor)

Citiraj ovu publikaciju

Faili, F.; Diduck, Q.; Babić, D. I.; Francis, D.; Wasserbauer, J.; Ejeckam, F.; Blevins, J. D.
Development of III-Nitride HEMTs on CVD Diamond Substrates // Proceedings of the CS MANTECH Conference
Palm Springs, California, SAD, 2011. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Faili, F., Diduck, Q., Babić, D., Francis, D., Wasserbauer, J., Ejeckam, F. & Blevins, J. (2011) Development of III-Nitride HEMTs on CVD Diamond Substrates. U: Proceedings of the CS MANTECH Conference.
@article{article, year = {2011}, keywords = {GaN, high-electron-mobility transistor (HEMT), CVD diamond, thermal management}, title = {Development of III-Nitride HEMTs on CVD Diamond Substrates}, keyword = {GaN, high-electron-mobility transistor (HEMT), CVD diamond, thermal management}, publisherplace = {Palm Springs, California, SAD} }