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Pregled bibliografske jedinice broj: 886751

Comparison of GaN HEMTs on Diamond and SiC Substrates


Felbinger, J.G.; Chandra, M.V.S.; Sun, Y.; Eastman, L.F.; Wasserbauer, J.; Faili, F.; Babić, D.; Francis, D.; Ejeckam, F.
Comparison of GaN HEMTs on Diamond and SiC Substrates // Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits
Venice, Italy, 2007. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Comparison of GaN HEMTs on Diamond and SiC Substrates

Autori
Felbinger, J.G. ; Chandra, M.V.S. ; Sun, Y. ; Eastman, L.F. ; Wasserbauer, J. ; Faili, F. ; Babić, D. ; Francis, D. ; Ejeckam, F.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits / - , 2007

Skup
31th Workshop on Compound Semiconductor Devices and Integrated Circuits

Mjesto i datum
Venice, Italy, May 20-23 (2007)

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers

Sažetak
The performance of AlGaN/GaN high-electron- mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on- diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.

Izvorni jezik
Engleski



POVEZANOST RADA


Profili:

Avatar Url Dubravko Babić (autor)

Avatar Url Branko Wasserbauer (autor)

Citiraj ovu publikaciju

Felbinger, J.G.; Chandra, M.V.S.; Sun, Y.; Eastman, L.F.; Wasserbauer, J.; Faili, F.; Babić, D.; Francis, D.; Ejeckam, F.
Comparison of GaN HEMTs on Diamond and SiC Substrates // Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits
Venice, Italy, 2007. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Felbinger, J., Chandra, M., Sun, Y., Eastman, L., Wasserbauer, J., Faili, F., Babić, D., Francis, D. & Ejeckam, F. (2007) Comparison of GaN HEMTs on Diamond and SiC Substrates. U: Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits.
@article{article, year = {2007}, keywords = {Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers}, title = {Comparison of GaN HEMTs on Diamond and SiC Substrates}, keyword = {Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers}, publisherplace = {Venice, Italy} }