Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 886747

GaN-HEMT Epilayers on Diamond Substrates: Recent Progress


Francis, D.; Wasserbauer, J.; Faili, F.; Babić, Dubravko I.; Ejeckam, F.; Hong, W.; Specht, P.; Weber, E.
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress // Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Session 7
Austin, Texas, SAD, 2007. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress

Autori
Francis, D. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Ejeckam, F. ; Hong, W. ; Specht, P. ; Weber, E.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Session 7 / - , 2007

Skup
International Conference on Compound Semiconductor Manufacturing Technology

Mjesto i datum
Austin, Texas, SAD, 14.-17.05.2007

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Gallium nitride, diamond, high-electron mobility transistors, X-Band, power, thermal management

Sažetak
Gallium-nitride high-electron-mobility transistors fabricated on diamond substrates are highly desired for use in high-power amplifiers for XBand radar systems and commercial cellular-base stations. Diamond substrates have high thermal conductivity which enables highly efficient removal of heat from the active device regions. This paper describes our progress towards manufacturability of commercial-grade galliumnitride-transistor epilayers on diamond substrates. We report on the fabrication of the thickest (100 μm) and largest (4”) GaN-onDiamond composite wafers to date and show selected material haracterization results.

Izvorni jezik
Engleski



POVEZANOST RADA


Profili:

Avatar Url Dubravko Babić (autor)

Avatar Url Branko Wasserbauer (autor)

Citiraj ovu publikaciju

Francis, D.; Wasserbauer, J.; Faili, F.; Babić, Dubravko I.; Ejeckam, F.; Hong, W.; Specht, P.; Weber, E.
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress // Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Session 7
Austin, Texas, SAD, 2007. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Francis, D., Wasserbauer, J., Faili, F., Babić, D., Ejeckam, F., Hong, W., Specht, P. & Weber, E. (2007) GaN-HEMT Epilayers on Diamond Substrates: Recent Progress. U: Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH). Session 7.
@article{article, year = {2007}, keywords = {Gallium nitride, diamond, high-electron mobility transistors, X-Band, power, thermal management}, title = {GaN-HEMT Epilayers on Diamond Substrates: Recent Progress}, keyword = {Gallium nitride, diamond, high-electron mobility transistors, X-Band, power, thermal management}, publisherplace = {Austin, Texas, SAD} }