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Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM (CROSBI ID 240834)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Paneta, V. ; Erich, M. ; Fazinić, Stjepko ; Kokkoris, M. ; Kopsalis, I. ; Petrović, Stjepko ; Tadić, Tonči Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 320 (2014), 6-11. doi: 10.1016/j.nimb.2013.11.020

Podaci o odgovornosti

Paneta, V. ; Erich, M. ; Fazinić, Stjepko ; Kokkoris, M. ; Kopsalis, I. ; Petrović, Stjepko ; Tadić, Tonči

engleski

Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM

Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the 'random' ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d, p(0)) and O-16(d, p(0), alpha(0)) reactions respectively, at E-d, E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.

d-NRA ; channeling implantation ; SEM

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Podaci o izdanju

320

2014.

6-11

objavljeno

0168-583X

10.1016/j.nimb.2013.11.020

Povezanost rada

Fizika

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