The evaluation of radiation damage parameter for CVD diamond (CROSBI ID 240557)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Grilj, Veljko ; Skukan, Natko ; Jakšić, Milko ; Pomorski, M. ; Kada, W. ; Kamiya, T. ; Ohshima, T.
engleski
The evaluation of radiation damage parameter for CVD diamond
There are a few different phenomenological approaches that aim to track the dependence of signal height in irradiated solid state detectors on the fluence of damaging particles. However, none of them are capable to provide a unique radiation hardness parameter that would reflect solely the material capability to withstand high radiation environment. To extract such a parameter for chemical vapor deposited (CVD) diamond, two different diamond detectors were irradiated with proton beams in MeV energy range and subjected afterwards to ion beam induced charge (IBIC) analysis. The change in charge collection efficiency (CCE) due to defects produced was investigated in context of a theoretical model that was developed on the basis of the adjoint method for linearization of the continuity equations of electrons and holes. Detailed modeling of measured data resulted with the first known value of the kr product for diamond, where k represents the number of charge carriers’ traps created per one simulated primary lattice vacancy and r represents the charge carriers’ capture cross section. As discussed in the text, this product could be considered as a true radiation damage parameter.
Radiation hardness, CVD diamond, Detector irradiation
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Podaci o izdanju
372
2016.
161-164
objavljeno
0168-583X
1872-9584
10.1016/j.nimb.2015.12.046