Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi

Charge collection efficiency degradation induced by MeV ions in semiconductor devices : Model and experiment (CROSBI ID 240554)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Vittone, E. ; Pastuović, Željko ; Breese, M. ; Garcia Lopez, J. ; Jakšić, Milko ; Raisanen, J. ; Siegele, R. ; Simon, A. ; Vizkelethy, G. Charge collection efficiency degradation induced by MeV ions in semiconductor devices : Model and experiment // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 372 (2016), 128-142. doi: 10.1016/j.nimb.2016.01.030

Podaci o odgovornosti

Vittone, E. ; Pastuović, Željko ; Breese, M. ; Garcia Lopez, J. ; Jakšić, Milko ; Raisanen, J. ; Siegele, R. ; Simon, A. ; Vizkelethy, G.

engleski

Charge collection efficiency degradation induced by MeV ions in semiconductor devices : Model and experiment

This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general onedimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/ transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

Charge collection efficiency, Radiation damage, Ion Beam Induced Charge (IBIC), Semiconductors, MeV ion beams

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o izdanju

372

2016.

128-142

objavljeno

0168-583X

10.1016/j.nimb.2016.01.030

Povezanost rada

Fizika

Poveznice
Indeksiranost