engleski

Enhanced oxidation of nickel at room temperature by low-energy oxygen implantation

The formation of oxide films on pure Ni surfaces by low energy oxygen ion-beam bombardment at room temperature was studied by X-ray photoelectron spectroscopy. Ion-induced oxidation is more efficient in creating thin NiO films on Ni surfaces than oxidation in oxygen atmosphere. The oxide thickness of bombarded samples is related to the penetration depth of oxygen ions in Ni and scales with the dose of implanted oxygen as 1/6. This type of oxide growth is predicted theoretically for diffusion of Ni cations by doubly charged cation vacancies, which creation and mobility is greatly enhanced by ion-irradiation.

Oxidation of Ni ; XPS, ion-beam bombardment ; Parabolic growth rate ; Oxygen implantation ; NiO oxidation in oxygen atmosphere

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