engleski

Impact of the Local p-well Substrate Parameters on the Electrical Performance of the Double- Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor

Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor is analyzed by the device simulations. Geometrical parameters of the local p-well substrate, which is used to introduce the second drift region are investigated. It is shown that the length of the p-well lpw=0.5 μm is sufficient to obtain efficient electric field shielding and BVCEO independent of the transistor current gain. The analysis of the distance between the extrinsic base and the p-well region (dpw) shows that the optimum dpw exists. The optimum structure with lpw=0.5 μm and dpw=0.6 μm has BVCEO=30 V and fT=7 GHz. With assumed p-well mask misalignment tolerances, a good trade-off between BVCEO and fT is achieved with transistors having the fT∙BVCEO at the Johnson's limit.

BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor

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