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A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration (CROSBI ID 239814)

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Koričić, Marko ; Žilak Josip ; Suligoj, Tomislav A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration // IEEE transactions on electron devices, 64 (2017), 7; 3019-3022. doi: 10.1109/TED.2017.2702189

Podaci o odgovornosti

Koričić, Marko ; Žilak Josip ; Suligoj, Tomislav

engleski

A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high- speed transistor is obtained with full depletion of the intrinsic collector by using implanted CMOS p-well region. Transistors with BVCEO=10.5 V and fT=15.8 GHz are demonstrated. Higher operating currents can be easily obtained by stretching the emitter length resulting in a flexible physical design of circuits. The transistor is fabricated in 0.18 µm HCBT BiCMOS process flow without the additional process steps and the use of additional lithography masks.

BiCMOS technology, high-voltage bipolar transistors, charge sharing, fully depleted collector, reduced-surface-field (RESURF), horizontal current bipolar transistor

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Podaci o izdanju

64 (7)

2017.

3019-3022

objavljeno

0018-9383

10.1109/TED.2017.2702189

Povezanost rada

Elektrotehnika

Poveznice
Indeksiranost