Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions (CROSBI ID 648588)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Knežević, Tihomir ; Lis K. Nanver ; Suligoj, Tomislav
engleski
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions
Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers from the bulk. The effect is more pronounced as the p+n junction depth becomes smaller and it dominates the electrical characteristics of ultrashallow junctions, as, for example sub-10-nm deep pure boron (PureB) diodes. The properties of the perimeter of such an interface play a critical role in the overall electrical characteristics. In this paper, a TCAD simulation study is described where nanometer-deep p+n junctions have an interface hole-layer that forms an energy barrier at the semiconductor-semiconductor interface. The suppression of bulk electron injection is analyzed with respect to the barrier height and the p+n junction depth. Perimeter effects are investigated by 2D simulations showing a detrimental impact on the parasitic majority carrier injection from the bulk in structures with nanometer deep p+n junctions. Other than employing a guard ring, reduction of the perimeter effects by shifting the position of the metal electrode was considered.
interface barrier, hole layer, perimeter effects, ultrashallow junctions
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Podaci o prilogu
80-84.
2017.
objavljeno
Podaci o matičnoj publikaciji
Petar Biljanović
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
978-953-323-093-9
1847-3938
Podaci o skupu
MIPRO 2017
predavanje
22.05.2017-26.05.2017
Opatija, Hrvatska