Analysis of Hot Carrier-Induced Degradation of Horizontal Current Bipolar Transistor (HCBT) (CROSBI ID 648577)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Žilak, Josip ; Koričić, Marko ; Suligoj, Tomislav
engleski
Analysis of Hot Carrier-Induced Degradation of Horizontal Current Bipolar Transistor (HCBT)
The relative contribution of the hot electrons and hot holes to the reliability degradation of the Horizontal Current Bipolar Transistor (HCBT) is investigated by TCAD simulations. The base current (IB) degradation, obtained by the reverse-bias emitter-base (EB) and mixed-mode stress measurements, is caused by a hot carrier-induced interface trap generation at silicon-oxide interfaces above and below HCBT's emitter n+ polysilicon region. The simulation analysis is performed on the HCBT structures with different n-collector doping profiles and n-hill silicon sidewall surface treatment. The used lucky electron injection model distinguishes the hot carrier type responsible for the damage and makes it possible to predict the HCBT reliability behavior. It is shown that the majority of traps under the reverse-bias EB stress is located at the top interface and is caused by the hot holes, whereas the hot electrons produce the traps under the mixed-mode stress, located mostly at the bottom interface.
Horizontal Current Bipolar Transistor, hot carriers, hot carrier rate, interface traps, reliability, reverse-bias emitter-base stress, mixed-mode stress, degradation
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Podaci o prilogu
85-90.
2017.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 40th International Convention MIPRO 2017
Biljanović, Petar
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
1847-3938
Podaci o skupu
MIPRO 2017
predavanje
22.05.2017-26.05.2017
Opatija, Hrvatska