engleski

Oxide crystal structure with square-pyramidally coordinated vanadium for integrated electronics manufactured at ultra-low processing temperatures

The study describes a targeted synthesis of a new dielectric material for an emerging ULTCC-I technology (ultra low temperature co-fired ceramic technology), which resulted in discovery of a PbTeV2O8 phase. A structural solution from powder data showed that the phase belongs to no known crystallographic family and is formed from V5+ ions in an unusual square- pyramidal coordination. It is characterized by a very low processing temperatures that enables integration with Al electrodes and, potentially, even with polymer and paper substrates. Dielectric properties in combination with the processing parameters qualify the PbTeV2O8 phase for integration, as mid-permittivity capacitors, in ULTCC-I modules.

ultra low processing

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