engleski

Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors

The impact of strain on the electron mobility is investigated in ultra-thin InGaAs-OI channels by combining tight-binding bandstructure simulations, self-consistent Schrodinger-Poisson, and mobility simulations including all relevant scattering mechanisms. Our model shows that strain induced mobility improvement increases with body thickness downscaling, up to 164% in 4 nm-thick InGaAs channels in strong inversion.

InGaAs-OI ; electron mobility ; strain ; Fermi level pinning ; interface charge ; ultra-thin body

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