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Pregled bibliografske jedinice broj: 862149

Influence of experimental parameters on secondary ion yield for MeV-SIMS


Stoytschew, Valentin; Bogdanović Radović, Ivančica; Siketić, Zdravko; Jakšić, Milko
Influence of experimental parameters on secondary ion yield for MeV-SIMS // Nuclear instruments and Methods. Section B: Beam interactions with materials and atoms, 404 (2017), 110-113 doi:10.1016/j.nimb.2017.01.022 (međunarodna recenzija, članak, znanstveni)


Naslov
Influence of experimental parameters on secondary ion yield for MeV-SIMS

Autori
Stoytschew, Valentin ; Bogdanović Radović, Ivančica ; Siketić, Zdravko ; Jakšić, Milko

Izvornik
Nuclear instruments and Methods. Section B: Beam interactions with materials and atoms (0168-583X) 404 (2017); 110-113

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Yield ; MeV SIMS ; ion beam analysis

Sažetak
Megaelectronvolt-Secondary Ion Mass Spectrometry (MeV-SIMS) is an emerging ion beam analysis technique for molecular speciation and submicrometer imaging. Following the construction of different experimental setups a systematic investigation on the dependence of secondary ion yields on experimental parameters is crucial. Without this knowledge, results are hard to interpret as surface roughness, scan size and the position on the sample can influence the secondary ion count and misleading images can be obtained. Additionally, to achieve better reproducibility the optimal experimental conditions need to be well known. In this work, we present the results of investigations into the influence of the main experimental parameters on the secondary ion yield.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Milko Jakšić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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