Napredna pretraga

Pregled bibliografske jedinice broj: 851900

Effects of substrate temperature on change in percolation properties of ultra thin dielectric films


Milanović, Željka; Zulim, Ivan; Pivac, Branko
Effects of substrate temperature on change in percolation properties of ultra thin dielectric films // Physica status solidi. C, Current topics in solid state physics, 13 (2016), 10-12; 756-759 doi:10.1002/pssc.201610041 (međunarodna recenzija, članak, znanstveni)


Naslov
Effects of substrate temperature on change in percolation properties of ultra thin dielectric films

Autori
Milanović, Željka ; Zulim, Ivan ; Pivac, Branko

Izvornik
Physica status solidi. C, Current topics in solid state physics (1862-6351) 13 (2016), 10-12; 756-759

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Percolation ; cubic lattice ; temperature ; thin films ; roughness

Sažetak
N this paper, we explored the impact of surface rough- ness on ultra-thin dielectrics characteristics. Simple cubic lattice is used as a base for de positing spheres of radius R, designed as a thin film, as the base for simulation of de- fects generation and depositi on. Continuum percolation model, used to generate a ro ugh surface in order to ana- lyse how roughness and temperature influence the con- ductivity, consists of randomly placed spheres of either one or some distribution of ra dii, which then form a thin, rough layer in question. It is shown that when the tem- perature of the substrate is increased material defects tend to form within the film contributing to a faster clus- ter growth and greater film conductivity. The influence of temperature on average cluster size for homogeneous dis- tribution of defects is assumed according to the applied temperature (depending on the free carrier’s diffusion length) is researched. It is evident from the performed simulations that temperature has an important influence on thin film conductivity in several different ways ; it can contribute to the increase of the number of spanning clus- ters or the average size of cl usters. This way, defects can either provide starting points for new spanning clusters or can encourage clusters merging.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
HRZZ-IP-2013-11-6135 - Poluvodičke kvantne strukture za napredne sklopove (Branko Pivac, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Scopus


Citati