engleski

X-Ray Reflectivity and GISAXS Study of Derelaxation in Kr Implanted Si

The structural changes induced in single crystal silicon implanted with Krypton above the amorphisation threshold were studied by X-ray reflectivity together with Grazing Incidence Small Angle X-ray Scattering technique. Silicon samples were implanted with Krypton with two different ion energies. A well-defined layer, 220 nm thick of amorphous silicon, rich in Krypton, was formed below the top, undisturbed layer. A series of samples consist of as-implanted, relaxed, and a number of samples with increased level of defects induced by additional Kr implantation. Additional implantation caused changes in the films composition and thickness, which was well evidenced in reflectivity curve, while only minor changes of surface roughness and critical angle were detected in GISAXS spectra.

Silicon, Defects, Krypton, Relaxation, Ion Implantation, X-Ray Reflectivity

nije evidentirano