engleski

Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

Computational study of the InP/InGaAs single photon avalanche diode (SPAD) is performed using the additional numerical modeling employed as an extension to the TCAD software. A new simulation environment is employed to model the discrete events such as dark count rate (DCR) and photon detection efficiency (PDE) and is extensively tested for a range of temperatures and 1D structure parameters. DCR for SPAD with diffused Zn p+ region operating at 200 K at 20 % PDE for 1.5 μm wavelength is 30% lower compared to the DCR of structure with box-like p+ region doping. The SPAD structures are also analyzed by transient simulations showing the impact of the external resistors on the response speed of the diodes.

transient analysis; InP/InGaAs; SPAD; DCR; PDE; TCAD; simulation environment; process simulations

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